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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM8208JPT CURRENT 7 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT D1 D1 D2 D2 8 5 4 1 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM8208JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 20 V V 12 7 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 25 2000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2007-11 RATING CHARACTERISTIC CURVES ( CHM8208JPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 20 V, VGS = 0 V VGS = 12V,VDS = 0 V VGS = -12V, VDS = 0 V 30 1 +10 -10 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS=4.5V, ID=7A 0.5 18 24 1.2 22 V RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=5.6A 32 m Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 40 115 15 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=10V, ID=7A VGS=4.5V V DD= 10V I D = 1A , RGEN= 6 VGS = 4.5 V 4.2 1.0 2.4 0.34 0.68 3.58 2 5.6 nC ton 0.68 1.72 7.16 4 uS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 7 1.2 A V Drain-Source Diode Forward Voltage IS = 7A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM8208JPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 50 10 Figure 2. Transfer Characteristics V G S =4.5,3.5,2.5V 40 8 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 30 6 20 4 VG S =1 . 5 V 10 TJ=-55C 2 J=125C T 0 TJ=25C 2.5 0 0 0.2 0.4 0.6 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0.8 0 0.5 1.0 1.5 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 5 VDS=48V ID=3.7A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=4.5V ID=7A 1.9 VGS , GATE TO SOURCE VOLTAGE (V) 4 DRAIN-SOURCE ON-RESISTANCE R DS(on) , NO RMALIZED 1.6 3 1.3 2 1.0 1 0.7 0 0 1 2 3 4 Qg , TOTAL GATE CHARGE (nC) 5 6 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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